Hickman, Austin: search on Z-Library

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1

Gate-recessed E-mode p-channel HFET with high on-current based on GaN/AlN 2D hole gas

Bader, Samuel James, Chaudhuri, Reet, Nomoto, Kazuki, Hickman, Austin, Chen, Zhen, Then, Han Wui, Muller, David A., Xing, Huili Grace, Jena, Debdeep

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 1.37 MB

english, 2018

2

The surgical management of chronic subdural hematoma

Andrew F. Ducruet, Bartosz T. Grobelny, Brad E. Zacharia, Zachary L. Hickman, Peter L. DeRosa, Kristen Anderson, Eric Sussman, Austin Carpenter, E. Sander Connolly

Journal:

Neurosurgical Review

Year:

2012

Language:

english

File:

PDF, 353 KB

english, 2012

3

GaN HEMTs on Si with Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

Li, Lei, Nomoto, Kazuki, Pan, Ming, Li, Wenshen, Hickman, Austin, Miller, Jeffrey, Lee, Kevin, Hu, Zongyang, Bader, Samuel James, Lee, Soo Min, Hwang, James C.M., Jena, Debdeep, Xing, Huili Grace

Journal:

IEEE Electron Device Letters

Year:

2020

Language:

english

File:

PDF, 663 KB

english, 2020

4

Anisotropic thermal conductivity in single crystal β-gallium oxide

Guo, Zhi, Verma, Amit, Wu, Xufei, Sun, Fangyuan, Hickman, Austin, Masui, Takekazu, Kuramata, Akito, Higashiwaki, Masataka, Jena, Debdeep, Luo, Tengfei

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 814 KB

english, 2015

5

Preoperative antiepileptic drug administration and the incidence of postoperative seizures following bur hole–treated chronic subdural hematoma

Grobelny, Bartosz T., Ducruet, Andrew F., Zacharia, Brad E., Hickman, Zachary L., Andersen, Kristen N., Sussman, Eric, Carpenter, Austin, Connolly, E. Sander

Journal:

Journal of Neurosurgery

Year:

2009

Language:

english

File:

PDF, 820 KB

english, 2009

6

Book reviews

Daniel F. Austin, Jack B. Fisher, Sandra K. Austin, Alan Hickman, Neil A. Harriman, Susan Carty, Michael J. Balick, Mary Eubanks, Gail Wagner, Thomas E. Hemmerly

Journal:

Economic Botany

Year:

1995

Language:

english

File:

PDF, 633 KB

english, 1995

7

High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs

Hickman, Austin, Chaudhuri, Reet, Bader, Samuel James, Nomoto, Kazuki, Lee, Kevin, Xing, Huili Grace, Jena, Debdeep

Journal:

IEEE Electron Device Letters

Year:

2019

File:

PDF, 766 KB

2019

8

Small ion concentrations in and near clouds and fogs

Austin W. Hogan, James R. Hickman

Journal:

Pure and Applied Geophysics

Year:

1965

Language:

english

File:

PDF, 353 KB

english, 1965

9

Hyperautomobility and Governmentality in Auckland

Hickman, Robin, Austin, Patricia, Banister, David

Journal:

Journal of Environmental Policy and Planning

Year:

2014

Language:

english

File:

PDF, 201 KB

english, 2014

10

Bottom tunnel junction blue light-emitting field-effect transistors

Bharadwaj, Shyam, Lee, Kevin, Nomoto, Kazuki, Hickman, Austin, van Deurzen, Len, Protasenko, Vladimir, Xing, Huili (Grace), Jena, Debdeep

Journal:

Applied Physics Letters

Year:

2020

File:

PDF, 1.82 MB

2020

11

Erratum to: The surgical management of chronic subdural hematoma

Ducruet, Andrew F., Grobelny, Bartosz T., Zacharia, Brad E., Hickman, Zachary L., DeRosa, Peter L., Andersen, Kristen N., Sussman, Eric, Carpenter, Austin, Connolly, E. Sander

Journal:

Neurosurgical Review

Year:

2015

File:

PDF, 172 KB

2015

12

Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devices

Bader, Samuel James, Lee, Hyunjea, Chaudhuri, Reet, Huang, Shimin, Hickman, Austin, Molnar, Alyosha, Xing, Huili Grace, Jena, Debdeep, Then, Han Wui, Chowdhury, Nadim, Palacios, Tomas

Journal:

IEEE Transactions on Electron Devices

Year:

2020

File:

PDF, 1.73 MB

2020

13

First RF Power Operation of AlN/GaN/AlN HEMTs with >3 A/mm and 3 W/mm at 10 GHz

Hickman, Austin, Chaudhuri, Reet, Li, Lei, Nomoto, Kazuki, Bader, Samuel James, Hwang, James C. M., Xing, Huili Grace, Jena, Debdeep

Journal:

IEEE Journal of the Electron Devices Society

Year:

2020

File:

PDF, 632 KB

2020

14

High Breakdown Voltage in RF AlN/GaN/AlN Quantum Well HEMTs

Hickman, Austin, Chaudhuri, Reet, Bader, Samuel James, Nomoto, Kazuki, Lee, Kevin, Xing, Huili Grace, Jena, Debdeep

Journal:

IEEE Electron Device Letters

Year:

2019

Language:

english

File:

PDF, 766 KB

english, 2019

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